48 matching

Transistor_FET

Bottom-side cooled 650 V E-mode GaN transistor, 15A Id, GaN_PX

Pins

3

Pads

3

SMD

5.5×7.1

Transistor_FET

Bottom-side cooled 650 V E-mode GaN transistor, 30A Id, GaN_PX

Pins

4

Pads

4

SMD

7.5×8.9

Amplifier_Operational

2.7 GHz, High-Voltage, FET-Input, Low Noise, Operational Amplifier, WSON-8

Pins

9

Pads

9

SMD

4.3×3.5

Transistor_FET

Bottom-side cooled 650 V E-mode GaN transistor, 7.5A Id, GaN_PX

Pins

3

Pads

3

SMD

5.5×7.1

Transistor_FET

31A Id, 400V Vds, 70mOhm, N-Channel GaN MOSFET, HSOF-8

Pins

4

Pads

4

SMD

13.3×10.5

Transistor_FET

13A Id, 600V Vds, 140mOhm, N-Channel GaN MOSFET, DFN-8

Pins

9

Pads

9

SMD

9.5×8.5

Transistor_FET

26A Id, 600V Vds, 56mOhm, N-Channel GaN MOSFET, DFN-8

Pins

9

Pads

9

SMD

9.5×8.5

Power_Management

80-V, 10-A GaN Half-Bridge Power Stage, MOF0009A

Pins

9

Pads

9

SMD

6.5×8.5

Transistor_FET

31A Id, 600V Vds, 70mOhm, N-Channel GaN MOSFET, HSOF-8

Pins

4

Pads

4

SMD

13.3×10.5

Amplifier_Instrumentation

Zero Drift, Micropower Instrumentation Amplifier G = 1 + 100kOhm/Rg, WSON-8

Pins

9

Pads

9

SMD

4.3×3.5

Power_Management

600-V 12-A Integrated GaN Power Stage, RWH0032A

Pins

33

Pads

33

SMD

8.9×8.9

Transistor_FET

31A Id, 600V Vds, 70mOhm, N-Channel GaN MOSFET, PD-DSO-20-87

Pins

16

Pads

20

SMD

16.1×16.4

Transistor_FET

12.5A Id, 600V Vds, 190mOhm, N-Channel GaN MOSFET, HSOF-8

Pins

4

Pads

4

SMD

13.3×10.5

Transistor_FET

15A Id, 600V Vds, 70mOhm, N-Channel GaN MOSFET, LSON-8

Pins

9

Pads

9

SMD

9.5×8.5

74xGxx

Single NAND Gate, Low-Voltage CMOS, SOT-553

Pins

5

Pads

5

SMD

2.7×2.1

Transistor_FET

31A Id, 600V Vds, 70mOhm, N-Channel GaN MOSFET, PD-DSO-20-85

Pins

17

Pads

21

SMD

16.1×16.4

Amplifier_Instrumentation

4.7 MHz Bandwidth, Low Offset, Low-Power, Precision Instrumentation Amplifier, G = 1 + 49.4kOhm/Rg, 4.5 V to 36 V Supply, WSON-8

Pins

9

Pads

9

SMD

4.3×3.5

Transistor_FET

10A Id, 600V Vds, 190mOhm, N-Channel GaN MOSFET, LSON-8

Pins

9

Pads

9

SMD

9.5×8.5

Driver_FET

Single-Channel GaN-Tr High-Speed Gate Driver, Output Current 6.0A, 24V, -5V Negative Gate Voltage, HQFN-16

Pins

17

Pads

17

SMD

4.9×4.9

Driver_FET

5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width, DSBGA-6

Pins

6

Pads

6

SMD

2.9×3.3

Driver_FET

Dual 5A MOSFET driver, 4.5V..18V supply, non-inverting, HTSSOP-8 (MSOP-8)

Pins

9

Pads

9

SMD

6.4×3.5

74xGxx

Single NAND Gate, Low-Voltage CMOS, SOT-353

Pins

5

Pads

5

SMD

3.6×2.5

Transistor_FET

650V, 49mΩ typ., 25A Id, enhancement mode PowerGaN transistor, ST_PowerFLAT_HV-8

Pins

8

Pads

8

SMD

7.0×5.9

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 24V Vin, +20V/-3.5V Vout

Pins

5

Pads

5

THT

20.0×10.3

RF_Amplifier

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier, LFCSP-32

Pins

33

Pads

33

SMD

6.2×6.2

Transistor_FET

100 V E-mode GaN transistor, RdsOn 550 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm

Pins

4

Pads

4

SMD

1.2×1.2

Transistor_FET

100 V E-mode GaN transistor, RdsOn 73 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm

Pins

4

Pads

4

SMD

1.2×1.2

Driver_FET

UltraCMOS High-Speed FET Driver, 40 MHz, Output Current 2.0A/4.0A, 80V, Half Bridge, Low Side Output, CSP-16

Pins

16

Pads

16

SMD

2.1×2.5

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 24V Vin, +20V/-5V Vout

Pins

5

Pads

5

THT

20.0×10.3

Transistor_FET

12A Id, 30V Vds, 10mOhm, N-Channel GaN MOSFET, DFN-6

Pins

8

Pads

8

SMD

2.8×2.5

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 15V Vin, +18V/-2.5V Vout

Pins

5

Pads

5

THT

20.0×10.3

Driver_FET

UltraCMOS High-Speed FET Driver, 40 MHz, Output Current 2.0A/4.0A, 80V, Half Bridge, Phase Control, CSP-16

Pins

16

Pads

16

SMD

2.1×2.5

Transistor_FET

80 V E-mode GaN transistor, RdsOn 80 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm

Pins

4

Pads

4

SMD

1.2×1.2

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 15V Vin, +20V/-5V Vout

Pins

5

Pads

5

THT

20.0×10.3

Transistor_FET

100 V E-mode GaN transistor, RdsOn 3.3 Ohm, 0.5A Id, Integrated Reverse Gate Clamp Diode, EPC_BGA-4_0.9x0.9mm

Pins

4

Pads

4

SMD

1.2×1.2

Regulator_Controller

Synchronous Rectifier Controller, 4A/8A, 4V UVLO, GaN Capable, WDFN-8

Pins

8

Pads

8

SMD

2.8×2.5

Transistor_FET

65 V E-mode GaN transistor, RdsOn 3.3 Ohm, 0.5A Id, Integrated Reverse Gate Clamp Diode, EPC_BGA-4_0.9x0.9mm

Pins

4

Pads

4

SMD

1.2×1.2

gekkio-Gekkio_Transistor_FET

45.5A Id, 30V Vds, N-Channel MOSFET, PowerPAK-8

Pins

5

Pads

5

SMD

7.1×5.5

RF_Amplifier

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier, LFCSP-32

Pins

33

Pads

33

SMD

6.2×6.2

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 15V Vin, +20V/-3.5V Vout

Pins

5

Pads

5

THT

20.0×10.3

Power_Management

GaN Half-Bridge Power-Stage with Integrated Gate-Drivers, 80 V, 35 A, EPC_QFN-13-3EP

Pins

13

Pads

13

SMD

6.1×4.6

Transistor_FET

60 V E-mode GaN transistor, RdsOn 45 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm

Pins

4

Pads

4

SMD

1.2×1.2

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 15V Vin, +15V/-15V Vout

Pins

5

Pads

5

THT

20.0×10.3

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 24V Vin, +18V/-2.5V Vout

Pins

5

Pads

5

THT

20.0×10.3

Power_Management

GaN Half-Bridge Power-Stage with Integrated Gate-Drivers, 80 V, 15 A, EPC_QFN-13-3EP

Pins

13

Pads

13

SMD

6.1×4.6

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 5V Vin, +18V/-2.5V Vout

Pins

5

Pads

5

THT

20.0×10.3

Converter_DCDC

5.2kVDC Isolated 2W Gate Drive, 12V Vin, +20V/-5V Vout

Pins

5

Pads

5

THT

20.0×10.3

Power_Management

GaN Half-Bridge Power-Stage with Integrated Gate-Drivers, 80 V, 25 A, EPC_QFN-13-3EP

Pins

13

Pads

13

SMD

6.1×4.6