Components
48 matching
Each one is a symbol, its recommended footprint and its 3D package model, linked by KiCad's own references and cross-checked pin by pin.
CSD25480F3
Transistor_FET
-1.7A Id, -20V Vds, P-Channel MOSFET, 159mOhm Ron,max @ 4.5Vgs, 0.70nC Qg,typ @ 4.5Vgs, PicoStar 0.73x0.64mm max, 0.69x0.60mm nom
- Pins
- 3
- Pads
- 3
- SMD
- 1.0×0.9
VP0610T
Transistor_FET
-0.18A Id, -60V Vds, P-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
BSD235C
Transistor_FET
-0.53/+0.95A Id, -20/+20V Vds, P/N-Channel MOSFET, SOT-363, Infineon
- Pins
- 6
- Pads
- 6
- SMD
- 2.9×2.2
EPC2035
Transistor_FET
60 V E-mode GaN transistor, RdsOn 45 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
EPC2037
Transistor_FET
100 V E-mode GaN transistor, RdsOn 550 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
VN10LF
Transistor_FET
0.15A Id, 60V Vds, N-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
EPC2036
Transistor_FET
100 V E-mode GaN transistor, RdsOn 73 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
ZVN3310F
Transistor_FET
0.1A Id, 100V Vds, N-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
EPC2203
Transistor_FET
80 V E-mode GaN transistor, RdsOn 80 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
TP0610T
Transistor_FET
-0.18A Id, -60V Vds, P-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
VP0610L
Transistor_FET
-0.18A Id, -60V Vds, P-Channel MOSFET, TO-92
- Pins
- 3
- Pads
- 3
- THT
- 5.5×4.6
BUZ31H3046
Transistor_FET
14.5A Id, 200V Vds, SIPMOS Power Transistor, N-Channel MOSFET, 0.2 ohms Rds, normal level (Vgs(th) = 2.1 .. 3.0 .. 4.0V), TO-262
- Pins
- 3
- Pads
- 3
- THT
- 10.5×5.0
ZVN3320F
Transistor_FET
0.06A Id, 200V Vds, N-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
IF3602
Transistor_FET
Ultra Low Noise: 0.35 nV/√Hz Typical, Dual Matched N-Channel JFET, TO-78-8
- Pins
- 7
- Pads
- 8
- THT
- 9.9×9.9
BUZ31L
Transistor_FET
13.5A Id, 200V Vds, SIPMOS Power Transistor, N-Channel MOSFET, 0.2 ohms Rds, logic level (Vgs(th) = 1.2 .. 1.6 .. 2.0V), TO-220
- Pins
- 3
- Pads
- 3
- THT
- 10.5×4.9
EPC2038
Transistor_FET
100 V E-mode GaN transistor, RdsOn 3.3 Ohm, 0.5A Id, Integrated Reverse Gate Clamp Diode, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
BUZ31
Transistor_FET
14.5A Id, 200V Vds, SIPMOS Power Transistor, N-Channel MOSFET, 0.2 ohms Rds, normal level (Vgs(th) = 2.1 .. 3.0 .. 4.0V), TO-220
- Pins
- 3
- Pads
- 3
- THT
- 10.5×4.9
FDMS8050
Transistor_FET
55A Id, 30V Vds, N-Channel PowerTrench MOSFET, 0.65mOhm Ron, 285nC Qgmax, -55 to 150 °C, 5x6mm SON8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
BSN20
Transistor_FET
0.5A Id, 50V Vds, N-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
FDMS8050ET30
Transistor_FET
55A Id, 30V Vds, N-Channel PowerTrench MOSFET, 0.65mOhm Ron, 285nC Qgmax, -55 to 175 °C, 5x6mm SON8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
BSC100N10NSFG
Transistor_FET
90A Id, 100V Vds, OptiMOS N-Channel Power MOSFET, 10.0mOhm Ron, Qg (typ) 33.0nC, PG-TDSON-8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
FDMS8350LET40
Transistor_FET
49A Id, 40V Vds, N-Channel PowerTrench MOSFET, 0.85mOhm Ron, 242nC Qgmax, -55 to 175 °C, 5x6mm SON8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
DMN10H700S
Transistor_FET
0.7A Id, 100V Vds, N-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
FDMS8350L
Transistor_FET
47A Id, 40V Vds, N-Channel PowerTrench MOSFET, 0.85mOhm Ron, 242nC Qgmax, -55 to 150 °C, 5x6mm SON8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
TP0610L
Transistor_FET
-0.18A Id, -60V Vds, P-Channel MOSFET, TO-92
- Pins
- 3
- Pads
- 3
- THT
- 5.5×4.6
CSD17570Q5B
Transistor_FET
100A Id, 30V Vds, NexFET N-Channel Power MOSFET, 0.69mOhm Ron, 93nC Qg(typ), SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
EPC2219
Transistor_FET
65 V E-mode GaN transistor, RdsOn 3.3 Ohm, 0.5A Id, Integrated Reverse Gate Clamp Diode, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
CSD16570Q5B
Transistor_FET
100A Id, 25V Vds, NexFET N-Channel Power MOSFET, 0.59mOhm Ron, 95nC Qg(typ), SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
IPT015N10N5
Transistor_FET
300A Id, 100V Vds, OptiMOS N-Channel Power MOSFET, 1.5mOhm Ron, Qg (typ) 169.0nC, PG-HSOF-8
- Pins
- 3
- Pads
- 3
- SMD
- 13.8×10.6
IPT020N10N3
Transistor_FET
300A Id, 100V Vds, OptiMOS N-Channel Power MOSFET, 2.0mOhm Ron, Qg (typ) 156.0nC, PG-HSOF-8
- Pins
- 3
- Pads
- 3
- SMD
- 13.8×10.6
CSD18509Q5B
Transistor_FET
100A Id, 40V Vds, NexFET N-Channel Power MOSFET, 1.2mOhm Ron, 150nC Qg(typ), SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
BSS83P
Transistor_FET
-0.33A Id, -60V Vds, P-Channel MOSFET, SOT-23
- Pins
- 3
- Pads
- 3
- SMD
- 3.9×3.4
CSD13380F3
Transistor_FET
3.6A Id, 12V Vds, N-Channel MOSFET, 76mOhm Ron,max @ 4.5Vgs, 0.91nC Qg,typ @ 4.5Vgs, PicoStar 0.73x0.64mm max, 0.69x0.60mm nom
- Pins
- 3
- Pads
- 3
- SMD
- 1.0×0.9
BSC040N10NS5
Transistor_FET
100A Id, 100V Vds, OptiMOS N-Channel Power MOSFET, 4.0mOhm Ron, Qg (typ) 58.0nC, PG-TDSON-8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
BSC030N08NS5
Transistor_FET
100A Id, 80V Vds, OptiMOS N-Channel Power MOSFET, 3.0mOhm Ron, Qg (typ) 61.0nC, PG-TDSON-8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
CSD17559Q5
Transistor_FET
100A Id, 30V Vds, NexFET N-Channel Power MOSFET, 1.15mOhm Ron, 39nC Qg(typ), SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
BSB008NE2LX
Transistor_FET
180A Id, 25V Vds, 0.8mOhm Rds, N-Channel MOSFET, DirectFET MX
- Pins
- 3
- Pads
- 3
- SMD
- 7.8×5.4
FDMS86550
Transistor_FET
32A Id, 60V Vds, N-Channel PowerTrench MOSFET, 1.65mOhm Ron, 154nC Qgmax, -55 to 150 °C, 5x6mm SON8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
BSD840N
Transistor_FET
0.88A Id, 20V Vds, Dual N-Channel MOSFET, 560mOhm Ron at 1.8V Vgs (ultra logic level), SOT-363
- Pins
- 6
- Pads
- 6
- SMD
- 2.9×2.2
CSD16414Q5
Transistor_FET
100A Id, 25V Vds, NexFET N-Channel Power MOSFET, 1.9mOhm Ron, Qg (typ) 16.6nC, SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
BSC060N10NS3G
Transistor_FET
90A Id, 100V Vds, OptiMOS N-Channel Power MOSFET, 6.0mOhm Ron, Qg (typ) 51.0nC, PG-TDSON-8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
FDMS86550ET60
Transistor_FET
32A Id, 60V Vds, N-Channel PowerTrench MOSFET, 1.65mOhm Ron, 154nC Qgmax, -55 to 175 °C, 5x6mm SON8
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
IGLD60R190D1
Transistor_FET
10A Id, 600V Vds, 190mOhm, N-Channel GaN MOSFET, LSON-8
- Pins
- 9
- Pads
- 9
- SMD
- 9.5×8.5
CSD16415Q5
Transistor_FET
100A Id, 25V Vds, NexFET N-Channel Power MOSFET, 1.15mOhm Ron, 21nC Qg(typ), SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
CSD17556Q5B
Transistor_FET
100A Id, 30V Vds, NexFET N-Channel Power MOSFET, 1.4mOhm Ron, Qg (typ) 28.5nC, SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
CSD17312Q5
Transistor_FET
100A Id, 30V Vds, NexFET N-Channel Power MOSFET, 1.7mOhm Ron, 28nC Qg(typ), SON8 5x6mm
- Pins
- 5
- Pads
- 5
- SMD
- 7.2×5.7
IGLD60R070D1
Transistor_FET
15A Id, 600V Vds, 70mOhm, N-Channel GaN MOSFET, LSON-8
- Pins
- 9
- Pads
- 9
- SMD
- 9.5×8.5
Si7617DN
Transistor_FET
-35A Id, -30V Vds, 0.0123 Ohm Ron, PowerPAK-8
- Pins
- 5
- Pads
- 5
- SMD
- 4.4×3.6
