48 matching

Diode

60V 10A 0.48Vf Schottky diode, TO-277B

Pins

3

Pads

3

SMD

4.5×7.8

Diode

400W unidirectional Transient Voltage Suppressor, 10.0Vr, SMA(DO-214AC)

Pins

2

Pads

2

SMD

7.0×3.5

Diode

1500W (10/1000 μs) Unidirectional TVS Diode, VRM = 30.8V (IRM = 0.2 μA at 25°C), VBR = 34.2 ... 37.8V, 'MEV' marking, SMC

Pins

2

Pads

2

SMD

8.8×6.4

Transistor_FET

-10A Id, -30V Vds, P-Channel MOSFET

Pins

3

Pads

3

SMD

2.7×2.6

Diode

400W unidirectional Transient Voltage Suppressor, 15.0Vr, SMA(DO-214AC)

Pins

2

Pads

2

SMD

7.0×3.5

Diode

100V, 10A low leakage current MEGA Schottky barrier rectifier, SOT-1289

Pins

3

Pads

3

SMD

7.5×4.8

Diode

1500W (10/1000 μs) Bidirectional TVS Diode, VRM = 30.8V (IRM = 0.2 μA at 25°C), VBR = 34.2 ... 37.8V, 'BEV' marking, SMC

Pins

2

Pads

2

SMD

8.8×6.4

Diode

45V, 10A low Vf MEGA Schottky barrier rectifier, SOT-1289

Pins

3

Pads

3

SMD

7.5×4.8

Diode

1500W (10/1000 μs) Unidirectional TVS Diode, VRM = 6.4V (IRM = 250 μA at 25°C), VBR = 7.13 ... 7.88V, 'MDG' marking, SMC

Pins

2

Pads

2

SMD

8.8×6.4

Diode

45V, 10A low Vf MEGA Schottky barrier rectifier, SOT-1289

Pins

3

Pads

3

SMD

7.5×4.8

Diode

60V, 10A low Vf MEGA Schottky barrier rectifier, SOT-1289

Pins

3

Pads

3

SMD

7.5×4.8

Diode

15V, 450W Discrete Bidirectional TVS Diode, SOD-323

Pins

2

Pads

2

SMD

3.2×1.9

Diode

1200V, 10A, SiC Schottky Diode, TO-252

Pins

2

Pads

2

SMD

13.2×7.5

Diode

1500W (10/1000 μs) Unidirectional TVS Diode, VRM = 5.8V (IRM = 500 μA at 25°C), VBR = 6.45 ... 7.14V, 'MDE' marking, SMC

Pins

2

Pads

2

SMD

8.8×6.4

Diode

650V, 10A, SiC Schottky Diode, TO-252

Pins

2

Pads

2

SMD

13.2×7.5

MCU_Microchip_ATtiny

10MHz, 8kB Flash, 512B SRAM, 512B EEPROM, debugWIRE, SOIC-8

Pins

8

Pads

8

SMD

9.3×5.8

Diode

45V, 10A extremely low Vf MEGA Schottky barrier rectifier, SOT-1289

Pins

3

Pads

3

SMD

7.5×4.8

Power_Protection

low capacitance single bidirectional high-speed protection, 850V 100mA 15.2ohm, https://www.bourns.com/data/global/pdfs/TBU-CA.pdf

Pins

3

Pads

3

SMD

7.0×4.5

Diode

45V, 10A low Vf Trench MEGA Schottky barrier rectifier, SOT-1289

Pins

3

Pads

3

SMD

7.5×4.8

Power_Management

ON Semi, +12V Electronic Fuse, 4.6A, WDFN-10

Pins

11

Pads

11

SMD

4.2×3.5

Diode

650V, 10A, SiC Schottky Diode, CoolSiC, PG-HDSOP-10-1 (DDPAK)

Pins

10

Pads

10

SMD

22.4×7.0

Power_Protection

low capacitance single bidirectional high-speed protection, 850V 500mA 10.7ohm, https://www.bourns.com/data/global/pdfs/TBU-CA.pdf

Pins

3

Pads

3

SMD

7.0×4.5

Driver_FET

40V 10A gate driver, SOT-23-6

Pins

6

Pads

6

SMD

4.1×3.4

Diode

400W bidirectional Transient Voltage Suppressor, 10.0Vr, SMA(DO-214AC)

Pins

2

Pads

2

SMD

7.0×3.5

Transistor_FET

10A Id, 600V Vds, 190mOhm, N-Channel GaN MOSFET, LSON-8

Pins

9

Pads

9

SMD

9.5×8.5

Analog_Switch

Dual 10 ohms SPDT Analog Switch, UQFN-10

Pins

10

Pads

10

SMD

2.4×2.9

kiml-00-kiml-power-protection

60V 100mA 40A 300mA 1812 Resettable Fuses

Pins

2

Pads

2

SMD

5.9×3.9

Diode

600V, 10A, SiC Schottky Diode, TO-263

Pins

2

Pads

2

SMD

16.6×11.3

Analog_Switch

Dual 10 ohms SPDT Analog Switch, TSSOP-10 (Texas DGS0010A / VSSOP)

Pins

10

Pads

10

SMD

6.3×3.5

Transistor_FET

10A Id, 150V Vds, N-Channel Shielded Gate PowerTrench MOSFET, 12.4mOhm Ron, 63nC Qgmax, -55 to 175 °C, 5x6mm SON8

Pins

5

Pads

5

SMD

7.2×5.7

Power_Management

2.7..18V, 3A, 79mohms On-Resistance Load Switch With Thermal Protection, WSON-6

Pins

7

Pads

7

SMD

2.7×2.5

Transistor_FET

10A Id, 150V Vds, N-Channel Shielded Gate PowerTrench MOSFET, 12.4mOhm Ron, 63nC Qgmax, -55 to 150 °C, 5x6mm SON8

Pins

5

Pads

5

SMD

7.2×5.7

MCU_Microchip_ATtiny

10MHz, 4kB Flash, 256B SRAM, 256B EEPROM, debugWIRE, SOIC-8

Pins

8

Pads

8

SMD

9.3×5.8

Power_Management

Intelligent Power Low Side Switch, 68V, 10A, DPAK-5L

Pins

3

Pads

3

SMD

11.1×7.0

Analog_Switch

Dual 1 ohm SPDT Analog Switch, TSSOP-10 (Texas DGS0010A / VSSOP)

Pins

10

Pads

10

SMD

6.3×3.5

Power_Management

Smart High-Side Power Switch, PROFET, Single, 16mOhm, 10A, 30V, TO252-5

Pins

5

Pads

5

SMD

11.1×7.0

Power_Management

Smart High-Side Power Switch, PROFET, Single, 16mOhm, 10A, 30V, TO252-5

Pins

5

Pads

5

SMD

11.1×7.0

Power_Protection

low capacitance single bidirectional high-speed protection, 500V 50mA 15.7ohm, https://www.bourns.com/data/global/pdfs/TBU-CA.pdf

Pins

3

Pads

3

SMD

7.0×4.5

Diode

1500W (10/1000 μs) Bidirectional TVS Diode, VRM = 6.4V (IRM = 250 μA at 25°C), VBR = 7.13 ... 7.88V, 'BDG' marking, SMC

Pins

2

Pads

2

SMD

8.8×6.4

Sensor_Current

±10A Bidirectional, Hall-Effect Current Sensor, +5.0V supply, 200mV/A, SOIC-16W

Pins

16

Pads

16

SMD

11.9×10.8

Sensor_Current

±10A Bidirectional, Hall-Effect Current Sensor, +3.3V supply, 133mV/A, SOIC-16W

Pins

16

Pads

16

SMD

11.9×10.8

muratovas-MAS_IC_PowerSupply

2A switching 4.2V lithium battery / 3.6V lithium iron Battery charger

Pins

17

Pads

17

SMD

5.3×5.3

Battery_Management

10A, 28V max voltage, Li-Ion Charger w/600kHz NMOS-NMOS Synchronous Buck Converter, VQFN-24

Pins

25

Pads

25

SMD

5.3×5.3

Diode

400W bidirectional Transient Voltage Suppressor, 15.0Vr, SMA(DO-214AC)

Pins

2

Pads

2

SMD

7.0×3.5

Sensor_Current

10A Unidirectional Hall-Effect Current Sensor, +5.0V supply, 400mV/A, SOIC-8

Pins

8

Pads

8

SMD

7.4×5.4

MCU_Microchip_ATtiny

10MHz, 2kB Flash, 128B SRAM, 128B EEPROM, debugWIRE, SOIC-8 (208 mil)

Pins

8

Pads

8

SMD

9.3×5.8

Sensor_Current

±10A Bidirectional Hall-Effect Current Sensor, +5.0V supply, 200mV/A, SOIC-8

Pins

8

Pads

8

SMD

7.4×5.4

Sensor_Current

±10A Bidirectional Hall-Effect Current Sensor, +3.3V supply, 132mV/A, SOIC-16

Pins

16

Pads

16

SMD

11.9×10.8