Components
34 matching
Each one is a symbol, its recommended footprint and its 3D package model, linked by KiCad's own references and cross-checked pin by pin.
AN34092B
Driver_FET
Single-Channel GaN-Tr High-Speed Gate Driver, Output Current 6.0A, 24V, -5V Negative Gate Voltage, HQFN-16
- Pins
- 17
- Pads
- 17
- SMD
- 4.9×4.9
LMG1020YFF
Driver_FET
5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width, DSBGA-6
- Pins
- 6
- Pads
- 6
- SMD
- 2.9×3.3
PE29101
Driver_FET
UltraCMOS High-Speed FET Driver, 40 MHz, Output Current 2.0A/4.0A, 80V, Half Bridge, Low Side Output, CSP-16
- Pins
- 16
- Pads
- 16
- SMD
- 2.1×2.5
PE29102
Driver_FET
UltraCMOS High-Speed FET Driver, 40 MHz, Output Current 2.0A/4.0A, 80V, Half Bridge, Phase Control, CSP-16
- Pins
- 16
- Pads
- 16
- SMD
- 2.1×2.5
1EDI20N12AFXUMA1
muratovas-MAS_IC_GateDriver
Single channel MOSFET and GaN HEMT gate driver IC
- Pins
- 8
- Pads
- 8
- SMD
- 7.4×5.4
EPC23102
Power_Management
GaN Half-Bridge Power-Stage with Integrated Gate-Drivers, 80 V, 35 A, EPC_QFN-13-3EP
- Pins
- 13
- Pads
- 13
- SMD
- 6.1×4.6
EPC23103
Power_Management
GaN Half-Bridge Power-Stage with Integrated Gate-Drivers, 80 V, 25 A, EPC_QFN-13-3EP
- Pins
- 13
- Pads
- 13
- SMD
- 6.1×4.6
EPC23104
Power_Management
GaN Half-Bridge Power-Stage with Integrated Gate-Drivers, 80 V, 15 A, EPC_QFN-13-3EP
- Pins
- 13
- Pads
- 13
- SMD
- 6.1×4.6
LMG3410
Power_Management
600-V 12-A Integrated GaN Power Stage, RWH0032A
- Pins
- 33
- Pads
- 33
- SMD
- 8.9×8.9
LMG5200
Power_Management
80-V, 10-A GaN Half-Bridge Power Stage, MOF0009A
- Pins
- 9
- Pads
- 9
- SMD
- 6.5×8.5
NCP4308AD
Regulator_Controller
Synchronous Rectifier Controller, 4A/8A, 4V UVLO, GaN Capable, SOIC-8
- Pins
- 8
- Pads
- 8
- SMD
- 7.4×5.4
NCP4308AMT
Regulator_Controller
Synchronous Rectifier Controller, 4A/8A, 4V UVLO, GaN Capable, WDFN-8
- Pins
- 8
- Pads
- 8
- SMD
- 2.8×2.5
HMC1099PM5E
RF_Amplifier
10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier, LFCSP-32
- Pins
- 33
- Pads
- 33
- SMD
- 6.2×6.2
HMC8500PM5E
RF_Amplifier
10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier, LFCSP-32
- Pins
- 33
- Pads
- 33
- SMD
- 6.2×6.2
12N03M
Transistor_FET
12A Id, 30V Vds, 10mOhm, N-Channel GaN MOSFET, DFN-6
- Pins
- 8
- Pads
- 8
- SMD
- 2.8×2.5
EPC2035
Transistor_FET
60 V E-mode GaN transistor, RdsOn 45 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
EPC2036
Transistor_FET
100 V E-mode GaN transistor, RdsOn 73 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
EPC2037
Transistor_FET
100 V E-mode GaN transistor, RdsOn 550 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
EPC2038
Transistor_FET
100 V E-mode GaN transistor, RdsOn 3.3 Ohm, 0.5A Id, Integrated Reverse Gate Clamp Diode, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
EPC2203
Transistor_FET
80 V E-mode GaN transistor, RdsOn 80 mOhm, 1.7A Id, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
EPC2219
Transistor_FET
65 V E-mode GaN transistor, RdsOn 3.3 Ohm, 0.5A Id, Integrated Reverse Gate Clamp Diode, EPC_BGA-4_0.9x0.9mm
- Pins
- 4
- Pads
- 4
- SMD
- 1.2×1.2
GS66502B
Transistor_FET
Bottom-side cooled 650 V E-mode GaN transistor, 7.5A Id, GaN_PX
- Pins
- 3
- Pads
- 3
- SMD
- 5.5×7.1
GS66504B
Transistor_FET
Bottom-side cooled 650 V E-mode GaN transistor, 15A Id, GaN_PX
- Pins
- 3
- Pads
- 3
- SMD
- 5.5×7.1
GS66508B
Transistor_FET
Bottom-side cooled 650 V E-mode GaN transistor, 30A Id, GaN_PX
- Pins
- 4
- Pads
- 4
- SMD
- 7.5×8.9