48 matching

Logic_Programmable

Programmable Array Logic (PAL), 20 array inputs (12 dedicated inputs), 10 active-low combinatorial outputs, DIP-24

Pins

24

Pads

24

THT

9.7×31.0

Transistor_FET_Other

Fully autoprotected Power MOSFET, OMNIFET, 35A Ilim, 70V Vclamp, 0.028 ohms Rds(on), diagnostic/fault feedback, TO-220

Pins

3

Pads

3

THT

10.5×4.9

Switch

NKK Switches NR01 Series rotary SP4T switch

Pins

7

Pads

7

THT

12.5×12.2

Logic_Programmable

Programmable Array Logic (PAL), Active-Low Combinatorial, DIP-24

Pins

24

Pads

24

THT

9.7×31.0

Memory_RAM

256Kbit Dual-Port Dynamic NMOS RAM (64K x 4-bit), 120/150ns access time (RAM Port), 40/60ns access time (Serial Port), 5V ±10% supply, DIP-24 (400 mil)

Pins

24

Pads

24

THT

12.3×31.0

Valve

pentode

Pins

8

Pads

9

THT

22.6×22.6

Switch

NKK Switches NR01 Series rotary SP3T switch

Pins

7

Pads

7

THT

12.5×12.2

Switch

NKK Switches NR01 Series rotary SP5T switch

Pins

7

Pads

7

THT

12.5×12.2

Valve

pentode

Pins

8

Pads

9

THT

22.6×22.6

Interface_LineDriver

Dual differential line driver and dual four-input NAND or dual four-input AND function, VDD +5V, DIP-14

Pins

14

Pads

14

THT

9.7×18.3

Valve

pentode

Pins

8

Pads

9

THT

22.6×22.6

Transistor_FET_Other

10A Id, 70V Vds, N-Channel Power MOSFET, fully autoprotected, TO-220

Pins

3

Pads

3

THT

10.5×4.9

Logic_Programmable

Programmable Array Logic (PAL), 20 array inputs (12 dedicated inputs), 8 registered outputs (active-low), DIP-24

Pins

24

Pads

24

THT

9.7×31.0

Valve

pentode

Pins

8

Pads

9

THT

22.6×22.6

Interface_LineDriver

Dual differential line driver and dual four-input NAND or dual four-input AND function, VDD +5V, DIP-14

Pins

14

Pads

14

THT

9.7×18.3

Valve

triode pentode

Pins

9

Pads

9

THT

22.6×22.6

Memory_RAM

8192 x 8-bit Static NMOS XRAM, 120/150/200ns access time, 5V ±10% supply, DIP-28 (600 mil)

Pins

28

Pads

28

THT

17.3×36.1

Valve

triode heptode

Pins

10

Pads

9

THT

22.6×22.6

Memory_NVRAM

256-Kbit (32K x 8-bit) nvSRAM, single 3.0V +20%/-10% (industrial) / single 3.3V +/-0.3V (military), 35ns, DIP-32

Pins

32

Pads

32

THT

9.8×41.3

Logic_Programmable

Not in Production, CMOS Programmable Electrically Erasable Logic Device, DIP-24

Pins

24

Pads

24

THT

9.7×31.0

Memory_NVRAM

256-Kbit (32K x 8-bit) nvSRAM, single 5V +/-10% operation, 35ns, DIP-32

Pins

32

Pads

32

THT

9.8×41.3

Transistor_FET

0.2A Id, 200V Vds, N-Channel MOSFET, 2.6V Logic Level, TO-92

Pins

3

Pads

3

THT

5.5×4.7

Valve

double triode, low-noise

Pins

8

Pads

9

THT

22.6×22.6

Transistor_FET_Other

150mA Ids, 400 Vds, Depletion-mode N-channel MOSFET, TO-220

Pins

3

Pads

3

THT

10.5×4.9

Valve

double triode

Pins

9

Pads

9

THT

22.6×22.6

Driver_FET

High Speed, Dual Channel Power MOSFET Driver, 4.5..15V supply, I(PK)=2A, inverting drivers, DIP-8

Pins

8

Pads

8

THT

9.7×10.7

Valve

triode pentode

Pins

9

Pads

9

THT

22.6×22.6

Memory_RAM

8192 x 8-bit Static CMOS RAM, 100/120/150ns access time, 5V ±10% supply, DIP-28 (300 mil)

Pins

28

Pads

28

THT

9.7×36.1

Memory_RAM

32K x 8-bit Static CMOS XRAM, 100/120/150ns access time, 5V ±10% supply, DIP-28 (600 mil)

Pins

28

Pads

28

THT

17.3×36.1

MCU_Module

Nucleo 144 Development Board with STM32F207ZGT6 MCU, 128+4Kb RAM, 1Mb FLASH

Pins

144

Pads

148

THT

71.0×138.3

Valve

double triode

Pins

9

Pads

9

THT

22.6×22.6

Driver_FET

High Speed, Dual Channel Power MOSFET Driver, 4.5..15V supply, I(PK)=2A, complementary drivers, DIP-8

Pins

8

Pads

8

THT

9.7×10.7

Memory_RAM

16384 x 1 bit Dynamic RAM, 150/200/250ns access time, VBB -5V, VCC 5V, VDD 12V, ±10% tolerance on all power supplies, TTL compatible inputs, DIP-16 (Epoxy/Plastic package)

Pins

16

Pads

16

THT

9.7×20.8

Sensor_Current

Hall Effect Current Transducer, 8A, Unipolar, 5V, THT

Pins

13

Pads

13

THT

13.1×25.1

Relay

RELPOL, Single Pole Relay SPST-NO, 6A

Pins

4

Pads

4

THT

20.8×10.5

DSP_Microchip_DSPIC33

40 MIPS, 64k Flash, 16k SRAM, DIP-28

Pins

28

Pads

28

THT

9.7×36.1

MCU_Module

Nucleo 144 Development Board with STM32F722ZET6 MCU, 256kB RAM, 512Kb FLASH

Pins

144

Pads

148

THT

71.0×138.3

Transistor_FET_Other

150mA Ids, 400 Vds, Depletion-mode N-channel MOSFET, TO-92

Pins

3

Pads

3

THT

5.5×4.7

Driver_FET

High Speed, Dual Channel Power MOSFET Driver, 4.5..15V supply, I(PK)=2A, non-inverting drivers, DIP-8

Pins

8

Pads

8

THT

9.7×10.7

MCU_Module

Nucleo 144 Development Board with STM32F439ZIT6 MCU, 256kB RAM, 2Mb FLASH

Pins

144

Pads

148

THT

71.0×138.3

MCU_Intel

8086 (minimum mode), 16-Bit HMOS Microprocessor, PDIP-40

Pins

40

Pads

40

THT

17.3×51.3

Diode

1500W (10/1000 μs) Unidirectional TVS Diode, VRM = 5V (IRM = 300 μA at 25°C), VBR = 6V, DO-201AE

Pins

2

Pads

2

THT

18.3×5.8

MCU_Module

Nucleo 144 Development Board with STM32F412ZGT6 MCU, 256kB RAM, 1Mb FLASH

Pins

144

Pads

148

THT

71.0×138.3

kiml-00-kiml-connector-pin-header-2.54mm

3A Straight Square Pins -40℃~+105℃ 3 2.54mm Plugin Black 1x3P Plugin,P=2.54mm Pin Headers

Pins

3

Pads

3

THT

3.5×8.6

MCU_Module

Nucleo 64 Development Board with STM32F411RET6 MCU, 128kB RAM, 512KB FLASH

Pins

80

Pads

148

THT

71.0×138.3

Sensor_Current

Hall Effect Current Transducer, 128A, Unipolar, 5V, THT

Pins

13

Pads

13

THT

22.5×44.1

Device

11 resistor network, star topology, bussed resistors, small US symbol

Pins

12

Pads

12

THT

31.1×3.1

Sensor_Current

Hall Effect Current Transducer, 120A, Unipolar, 5V, THT

Pins

13

Pads

13

THT

22.5×44.1